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JMnic
Product Specification
Silicon PNP Power Transistors
2SA1635
DESCRIPTION With TO-220Fa package Low collector saturation voltage Complement to type 2SC4008 APPLICATIONS For medium speed,electrical supply and DC-DC converter applications
PINNING PIN 1 2 3 DESCRIPTION Emitter Collector Base
Absolute maximum ratings(Ta=25ae )
SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25ae CONDITIONS Open emitter Open base Open collector VALUE -80 -80 -5 -4 30 150 -55~150 ae ae UNIT V V V A W
JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=-1mA ,IB=0 IE=-0.1mA ,IC=0 IC=-2A; IB=-0.2A IC=-2A; IB=-0.2A VCB=-80V; IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-4V IE=0 ; VCB=-10V;f=1MHz IC=-0.5A ; VCE=-12V 60 80 12 MIN -80 -5 TYP.
2SA1635
SYMBOL V(BR)CEO V(BR)EBO VCEsat VBE sat ICBO IEBO hFE COB fT
MAX
UNIT V V
-1.5 -1.5 -10 -10 320 |I |I
V V A A
pF MHz
hFE Classifications D 60-120 E 100-200 F 160-320
2
JMnic
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SA1635
Fig.2 Outline dimensions (unindicated tolerance:A
0.15 mm)
3

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